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ASTM F108-88

Test Method for Resistivity of Silicon Epitaxial Layers by the Three-Probe Voltage Breakdown Method (Withdrawn 1993)
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ASTM F108-88

Test Method for Resistivity of Silicon Epitaxial Layers by the Three-Probe Voltage Breakdown Method (Withdrawn 1993)

PUBLISH DATE 2010
ASTM F108-88

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SDO ASTM: ASTM International
Document Number F108
Publication Date Dec. 31, 2010
Language en - English
Page Count
Revision Level 88
Supercedes
Committee .
Publish Date Document Id Type View
Dec. 31, 2010 F0108-88 Revision
Jan. 1, 1988 F0108-88E01 Revision