1.1Â This practice covers procedures for determining operating regions that are safe from metallization burnout induced by current pulses of less than 1-s duration.
1.2Â This practice is based on the application of unipolar rectangular current test pulses. An extrapolation technique is specified for mapping safe operating regions in the pulse-amplitude versus pulse-duration plane. A procedure is provided in Appendix X2 to relate safe operating regions established from rectangular pulse data to safe operating regions for arbitrary pulse shapes.
1.1Â This practice covers procedures for determining operating regions that are safe from metallization burnout induced by current pulses of less than 1-s duration.
1.2Â This practice is based on the application of unipolar rectangular current test pulses. An extrapolation technique is specified for mapping safe operating regions in the pulse-amplitude versus pulse-duration plane. A procedure is provided in Appendix X2 to relate safe operating regions established from rectangular pulse data to safe operating regions for arbitrary pulse shapes.
4.1Â Solid-state electronic devices subjected to stresses from excessive current pulses sometimes fail because a portion of the metallization fuses or vaporizes (suffers burnout). Burnout susceptibility can vary significantly from component to component on a given wafer, regardless of design. This practice provides a procedure for establishing the limits of pulse current overstress within which the metallization of a given device should survive.
| SDO | ASTM: ASTM International |
| Document Number | F615 |
| Publication Date | May 1, 2013 |
| Language | en - English |
| Page Count | 5 |
| Revision Level | 95(2013) |
| Supercedes | |
| Committee | F01.11 |
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