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BSI BS EN 60749-34:2010

Semiconductor devices. Mechanical and climatic test methods -- Power cycling
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BSI BS EN 60749-34:2010

Semiconductor devices. Mechanical and climatic test methods -- Power cycling

PUBLISH DATE 2011
PAGES 14
BSI BS EN 60749-34:2010

This part of IEC 60749 describes a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when low-voltage operating biases for forward conduction (load currents) are periodically applied and removed, causing rapid changes of temperature. The power cycling test is intended to simulate typical applications in power electronics and is complementary to high temperature operating life (see IEC 60749-23). Exposure to this test may not induce the same failure mechanisms as exposure to air-to-air temperature cycling, or to rapid change of temperature using the two-fluid-baths method. This test causes wear-out and is considered destructive.

NOTE It is not the intention of this specification to provide prediction models for lifetime evaluation.

SDO BSI: British Standards Institution
Document Number EN 60749-34
Publication Date Feb. 28, 2011
Language en - English
Page Count
Revision Level
Supercedes
Committee EPL/47
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