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BSI BS EN 60749-44:2016

Semiconductor devices. Mechanical and climatic test methods -- Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
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BSI BS EN 60749-44:2016

Semiconductor devices. Mechanical and climatic test methods -- Neutron beam irradiated single event effect (SEE) test method for semiconductor devices

PUBLISH DATE 2016
PAGES 26
BSI BS EN 60749-44:2016
IEC 60749-44:2016 establishes a procedure for measuring the single event effects (SEEs) on high density integrated circuit semiconductor devices including data retention capability of semiconductor devices with memory when subjected to atmospheric neutron radiation produced by cosmic rays. The single event effects sensitivity is measured while the device is irradiated in a neutron beam of known flux. This test method can be applied to any type of integrated circuit.
NOTE 1 - Semiconductor devices under high voltage stress can be subject to single event effects including SEB, single event burnout and SEGR single event gate rupture, for this subject which is not covered in this document, please refer to IEC 62396-4.
NOTE 2 - In addition to the high energy neutrons some devices can have a soft error rate due to low energy (<1 eV) thermal neutrons. For this subject which is not covered in this document, please refer to IEC 62396-5.
SDO BSI: British Standards Institution
Document Number EN 60749-44
Publication Date Nov. 30, 2016
Language en - English
Page Count 26
Revision Level
Supercedes
Committee EPL/47
Publish Date Document Id Type View
Nov. 30, 2016 BS EN 60749-44:2016 Revision