BSI BS IEC 60747-4:2007+A1:2017

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Semiconductor devices. Discrete devices -- Microwave diodes and transistors

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BSI BS IEC 60747-4:2007+A1:2017

Semiconductor devices. Discrete devices -- Microwave diodes and transistors

PUBLISH DATE 2020
PAGES 140
BSI BS IEC 60747-4:2007+A1:2017

This part of IEC 60747 gives requirements for the following categories of discrete devices:

  • Variable capacitance diodes and snap-off diodes (for tuning, up-converter or harmonic multiplication, switching, limiting, phased shift, parametric amplification);

  • Mixer diodes and detector diodes;

  • Avalanche diodes (for direct harmonic generation, amplification);

  • Gunn diodes (for direct harmonic generation);

  • Bipolar transistors (for amplification, oscillation);

  • Field-effect transistors (for amplification, oscillation).

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