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BSI BS IEC 60747-4:2007+A1:2017

Semiconductor devices. Discrete devices -- Microwave diodes and transistors
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BSI BS IEC 60747-4:2007+A1:2017

Semiconductor devices. Discrete devices -- Microwave diodes and transistors

PUBLISH DATE 2020
PAGES 140
BSI BS IEC 60747-4:2007+A1:2017

This part of IEC 60747 gives requirements for the following categories of discrete devices:

  • variable capacitance diodes and snap-off diodes (for tuning, up-converter or harmonic multiplication, switching, limiting, phased shift, parametric amplification);

  • mixer diodes and detector diodes;

  • avalanche diodes (for direct harmonic generation, amplification);

  • gunn diodes (for direct harmonic generation);

  • bipolar transistors (for amplification, oscillation);

  • field-effect transistors (for amplification, oscillation).

SDO BSI: British Standards Institution
Document Number IEC 60747-4
Publication Date May 26, 2020
Language en - English
Page Count 140
Revision Level
Supercedes
Committee EPL/47
Publish Date Document Id Type View
Feb. 29, 2008 BS IEC 60747-4:2007 Revision
May 26, 2020 BS IEC 60747-4:2007+A1:2017 Consolidated
July 31, 2018 BS IEC 60747-4:2007+A1:2017 Consolidated