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BSI BS IEC 60747-9:2019

Semiconductor devices -- Discrete devices. Insulated-gate bipolar transistors (IGBTs)
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BSI BS IEC 60747-9:2019

Semiconductor devices -- Discrete devices. Insulated-gate bipolar transistors (IGBTs)

PUBLISH DATE 2019
PAGES 82
BSI BS IEC 60747-9:2019

This part of IEC 60747 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).

SDO BSI: British Standards Institution
Document Number IEC 60747-9
Publication Date Nov. 22, 2019
Language en - English
Page Count 82
Revision Level
Supercedes
Committee EPL/47
Publish Date Document Id Type View
Nov. 22, 2019 BS IEC 60747-9:2019 Revision
Nov. 30, 2007 BS IEC 60747-9:2007 Revision
Dec. 15, 1998 BS IEC 60747-9:1998 Revision
Jan. 17, 2003 BS IEC 60747-9:1998 Consolidated