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BSI BS IEC 62047-31:2019

Semiconductor devices. Micro-electromechanical devices -- Four-point bending test method for interfacial adhesion energy of layered MEMS materials
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BSI BS IEC 62047-31:2019

Semiconductor devices. Micro-electromechanical devices -- Four-point bending test method for interfacial adhesion energy of layered MEMS materials

PUBLISH DATE 2019
PAGES 14
BSI BS IEC 62047-31:2019
IEC 62047-31:2019 (E) specifies a four-point bending test method for measuring interfacial adhesion energy of the weakest interface in the layered micro-electromechanical systems (MEMS) based on the concept of fracture mechanics. In a variety of MEMS devices, there are many layered material interfaces, and their adhesion energies are critical to the reliability of the MEMS devices. The four-point bending test utilizes a pure bending moment applied to a test piece of layered MEMS device, and the interfacial adhesion energy is measured from the critical bending moment for the steady state cracking in the weakest interface. This test method applies to MEMS devices with thin film layers deposited on semiconductor substrates. The total thickness of the thin film layers should be 100 times less than the thickness of a supporting substrate (typically a silicon wafer piece).
SDO BSI: British Standards Institution
Document Number IEC 62047-31
Publication Date April 17, 2019
Language en - English
Page Count 14
Revision Level
Supercedes
Committee EPL/47
Publish Date Document Id Type View
April 17, 2019 BS IEC 62047-31:2019 Revision