BSI BS IEC 63068-1:2019

Current Revision
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices -- Classification of defects

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BSI BS IEC 63068-1:2019

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices -- Classification of defects

PUBLISH DATE 2019
PAGES 26
BSI BS IEC 63068-1:2019

IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers.

The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including:

  • bright-field OM (optical microscopy),
  • PL (photoluminescence), and
  • XRT (X-ray topography) images.
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