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Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials
This International Standard specifies a secondary-ion mass spectrometric method for the determination of boron atomic concentration in single-crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron.
This method is applicable to uniformly doped boron in the concentration range from 1 × 1016 atoms/cm3 to 1 × 1020 atoms/cm3.
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