BSI PD IEC TS 62607-6-16:2022

Current Revision
Nanomanufacturing. Key control characteristics -- Two-dimensional materials. Carrier concentration: Field effect transistor method

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BSI PD IEC TS 62607-6-16:2022

Nanomanufacturing. Key control characteristics -- Two-dimensional materials. Carrier concentration: Field effect transistor method

PUBLISH DATE 2022
PAGES 26
BSI PD IEC TS 62607-6-16:2022

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