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BSI PD ISO/TR 16268:2009

Surface chemical analysis. Proposed procedure for certifying the retained areic dose in a working reference material produced by ion implantation
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BSI PD ISO/TR 16268:2009

Surface chemical analysis. Proposed procedure for certifying the retained areic dose in a working reference material produced by ion implantation

PUBLISH DATE 2009
PAGES 30
BSI PD ISO/TR 16268:2009

This Technical Report specifies a procedure for the certification of the areic dose of an ion-implanted analyte element of atomic number larger than that of silicon retained in a working reference material (WoRM) intended for surface-analytical use.

The WoRM is in the form of a polished (or similarly smooth-faced) wafer (also referred to as the host), of uniform composition and nominal diameter 50 mm or more, that has been ion-implanted with nominally one isotope of a chemical element (also referred to as the analyte), not already present in the host, to a nominal areic dose normally within the range 1016 atoms/cm2 to 1013 atoms/cm2 (i.e. the range of primary interest in semiconductor technology).

The areic dose of the ion-implanted analyte retained in the WoRM wafer is certified against the areic dose of the same analyte retained in an ion-implanted silicon wafer having the status of a (preferably certified) secondary reference material (SeRM).

Information is provided on the concept and the procedure for certification of the WoRM.

There is also a description of the requirements for the reference materials, the comparative measurements and the actual certification.

Supporting information on:

  • ion implantation,
  • ion-implantation dosimetry,
  • wavelength-dispersive X-ray fluorescence spectroscopy, and
  • non-certified substitutes for unobtainable SeRMs

is provided in Annexes A to D.

Sources and magnitudes of uncertainties arising in the certification process are detailed in Annex E.

SDO BSI: British Standards Institution
Document Number ISO/TR 16268
Publication Date Nov. 30, 2009
Language en - English
Page Count
Revision Level
Supercedes
Committee CII/60
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