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BSI PD ISO/TR 22335:2007

Surface chemical analysis. Depth profiling. Measurement of sputtering rate. Mesh-replica method using a mechanical stylus profilometer
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BSI PD ISO/TR 22335:2007

Surface chemical analysis. Depth profiling. Measurement of sputtering rate. Mesh-replica method using a mechanical stylus profilometer

PUBLISH DATE 2007
PAGES 28
BSI PD ISO/TR 22335:2007

This Technical Report describes a method for determining ion-sputtering rates for depth profiling measurements with Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) where the specimen is ion-sputtered over a region with an area between 0,4 mm2 and 3,0 mm2.

This Technical Report is applicable only to a laterally homogeneous bulk or single-layered material where the ion-sputtering rate is determined from the sputtered depth, as measured by a mechanical stylus profilometer, and sputtering time.

This Technical Report provides a method to convert the ion-sputtering time scale to sputtered depth in a depth profile by assuming a constant sputtering velocity.

This method has not been designed for, or tested using, a scanning probe microscope system. It is not applicable to the case where the sputtered area is less than 0,4 mm2 or where the sputter-induced surface roughness is significant compared with the sputtered depth to be measured.

SDO BSI: British Standards Institution
Document Number ISO/TR 22335
Publication Date Aug. 31, 2007
Language en - English
Page Count
Revision Level
Supercedes
Committee CII/60
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