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IEC 60747-8 Ed. 3.1 en:2021

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
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IEC 60747-8 Ed. 3.1 en:2021

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

PUBLISH DATE 2021
PAGES 160
IEC 60747-8 Ed. 3.1 en:2021

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

IEC 60747-8:2010+A1:2021 gives standards for the following categories of field-effect transistors:

  • type A: junction-gate type;
  • type B: insulated-gate depletion (normally on) type;
  • type C: insulated-gate enhancement (normally off) type.

The main changes with respect to the previous edition are listed below.

a) "Clause 3 Classification" was moved and added to Clause 1.

b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.

c) Clause 5, 6 and 7 were amended with necessary additions and deletions.

This publication is to be read in conjunction with IEC 60747-1:2006.

SDO IEC: International Electrotechnical Commission
Document Number IEC 60747
Publication Date June 1, 2021
Language en - English
Page Count
Revision Level 3.1
Supercedes
Committee 47E
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