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IEC 60747-8 Ed. 3.1 en:2021

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

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IEC 60747-8 Ed. 3.1 en:2021

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

PUBLISH DATE 2021

PAGES 160

Document Information

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

IEC 60747-8:2010+A1:2021 gives standards for the following categories of field-effect transistors:
- type A: junction-gate type;
- type B: insulated-gate depletion (normally on) type;
- type C: insulated-gate enhancement (normally off) type.
The main changes with respect to the previous edition are listed below.
a) "Clause 3 Classification" was moved and added to Clause 1.
b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.
c) Clause 5, 6 and 7 were amended with necessary additions and deletions.
This publication is to be read in conjunction with IEC 60747-1:2006.


SDO	IEC: International Electrotechnical Commission
Document Number	IEC 60747
Publication Date	June 1, 2021
Language	en - English
Page Count	160
Revision Level	3.1
Supercedes
Committee	47E

Publish Date	Document Id	Type
June 1, 2021		Revision
June 1, 2021	IEC 60747-8 Ed. 3.1 en:2021	Revision
Not Available		Revision
Dec. 1, 2010		Revision
Dec. 1, 2010	IEC 60747-8 Ed. 3.0 b:2010	Revision

SDO	Document	Title
BSI	BSI BS QC 750114	Harmonized system of quality assessment for electronic components. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for case-rated field-effect transistors for switching applications
BSI	BSI BS QC 750112	Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz
BSI	BSI BS IEC 60747-4-1	Semiconductor devices. Discrete devices -- Microwave diodes and transistors. Microwave field effect transistors. Blank detail specification
IEC	IEC 63275-1	Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
IEC	IEC 63275-2	Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation
BSI	BSI BS 6493-1.8	Semiconductor devices. Discrete devices -- Recommendations for field-effect transistors
BSI	BSI BS IEC 60747-8-4	Discrete semiconductor devices -- Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications
ASA	ASA S1.15/IEC 61094 Part 8	Measurement Microphones – Part 8: Methods For Determining The Free-field Sensitivity Of Working Standard Microphones By Comparison
IEC	IEC 60747-15	Semiconductor devices - Part 15: Discrete devices - Isolated power semiconductor devices
IEC	IEC 60747-7	Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
BSI	BSI BS IEC 63275-1	Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors -- Test method for bias temperature instability
IEC	IEC 60747-14-4	Semiconductor devices - Discrete devices - Part 14-4: Semiconductor accelerometers
IEC	IEC 60747-4	Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
BSI	BSI BS QC 750106	Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Field-effect transistors for case-rated power amplifier applications
BSI	BSI BS IEC 60747-8	Discrete semiconductor devices and integrated circuits -- Field-effect transistors
IEC	IEC 60747-9	Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
IEC	IEC 62373-1	Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
IEC	IEC 62951-8	Semiconductor devices - Flexible and stretchable semiconductor devices - Part 8: Test method for stretchability, flexibility, and stability of flexible resistive memory
BSI	BSI BS 6493-1-1.5	Semiconductor devices: discrete devices and integrated circuits. Discrete devices. -- Recommendations for optoelectronic devices
BSI	BSI BS EN 60747-15	Semiconductor devices. Discrete devices -- Isolated power semiconductor devices
BSI	BSI BS EN IEC 60747-15	Semiconductor devices -- Discrete devices. Isolated power semiconductor devices
IEC	IEC 62951-3	Semiconductor devices - Flexible and stretchable semiconductor devices - Part 3: Evaluation of thin film transistor characteristics on flexible substrates under bulging
BSI	BSI BS IEC 60747-14-2	Discrete semiconductor devices and integrated circuits. Semiconductor devices. Semiconductor sensors -- Hall elements
IEC	IEC 62830-8	Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 8: Test and evaluation methods of flexible and stretchable supercapacitors for use in low power electronics
BSI	BSI BS EN 62417	Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)