Current Revision

IEC 62373-1 Ed. 1.0 b:2020

Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

PDF

$262.00

Bundle

$471.60

Sub Total (1 Item(s))

$ 0.00

Estimated Shipping

$ 0.00

Total (Pre-Tax)

$ 0.00

I have read and agree to the Terms & Conditions

IEC 62373-1 Ed. 1.0 b:2020

Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

PUBLISH DATE 2020

Document Information

Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).
This document also defines the terms pertaining to the conventional BTI test method.


SDO	IEC: International Electrotechnical Commission
Document Number	IEC 62373
Publication Date	July 1, 2020
Language	b - English & French
Page Count
Revision Level	1.0
Supercedes
Committee	47

Publish Date	Document Id	Type	View
July 1, 2020	IEC 62373-1 Ed. 1.0 b:2020	Revision
July 1, 2020		Revision

SDO	Document	Title
IEC	IEC 63275-1	Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
BSI	BSI BS IEC 62373-1	Semiconductor devices. Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) -- Fast BTI test for MOSFET
IEC	IEC 62373	Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
IEC	IEC 63275-2	Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation
IEC	IEC 62417	Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
BSI	BSI BS EN 62373	Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
BSI	BSI BS EN 62417	Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
BSI	BSI BS IEC 63275-1	Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors -- Test method for bias temperature instability
BSI	BSI BS IEC 60747-8-4	Discrete semiconductor devices -- Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications
BSI	BSI BS QC 750112	Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz
ASA	ASA S1.17 Part 1	Microphone Windscreens – Part 1: Test Procedures for Measurements of Insertion Loss in Still Air
BSI	BSI BS QC 750114	Harmonized system of quality assessment for electronic components. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for case-rated field-effect transistors for switching applications
IEC	IEC 60747-8	Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
IEC	IEC 62951-1	Semiconductor devices - Flexible and stretchable semiconductor devices - Part 1: Bending test method for conductive thin films on flexible substrates
IEC	IEC 63364-1	Semiconductor devices - Semiconductor devices for IoT system - Part 1: Test method of sound variation detection
BSI	BSI BS IEC 60747-4-1	Semiconductor devices. Discrete devices -- Microwave diodes and transistors. Microwave field effect transistors. Blank detail specification
ASA	ASA S1.15/IEC 61094 Part 1	Measurement Microphones – Part 1: Specifications for Laboratory Standard Microphones
IEC	IEC 62951-9	Semiconductor devices - Flexible and stretchable semiconductor devices - Part 9: Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells
ASA	ASA S12.53/ISO 3743 Part 1	Determination of sound power levels and sound energy levels of noise sources using sound pressure – Engineering methods for small, movable sources in reverberant fields – Part 1: Comparison method for a hard-walled test room
ASA	ASA S1.4/IEC 61672 Part 1	Sound Level Meters – Part 1: Specifications
ASA	ASA S2.75 Part 1	Shaft Alignment Methodology, Part 1: General Principles, Methods, Practices, and Tolerances
API	554, Part 1	Process Control Systems, Part 1—Process Control Systems Functions and Functional Specification Development
IEC	IEC 62951-8	Semiconductor devices - Flexible and stretchable semiconductor devices - Part 8: Test method for stretchability, flexibility, and stability of flexible resistive memory
BSI	BSI BS ISO 8279	Aerospace. Nuts, hexagonal, plain, normal height, normal across flats, with MJ threads, classifications: 600 MPa (at ambient temperature)/120 °C, 600 MPa (at ambient temperature)/235 °C, 900 MPa (at ambient temperature)/425 °C, 1 100 MPa (at ambient temperature)/235 °C, 1 100 MPa (at ambient temperature)/315 °C, 1 100 MPa (at ambient temperature)/650 °C, 1 210 MPa (at ambient temperature)/730 °C, 1 250 MPa(at ambient temperature)/235 °C and 1 550 MPa (at ambient temperature)/600 °C. Dimensions
BSI	BSI BS A 316	Nuts, hexagonal, slotted (castellated), normal height, normal across flats, with MJ threads, classifications. 600 MPa (at ambient temperature)/120°C, 600 MPa (at ambient temperature)/235°C, 900 MPa (at ambient temperature)/425°C, 1 100 MPa (at ambient temperature)/235°C, 1 100 MPa (at ambient temperature)/315°C, 1 100 MPa (at ambient temperature)/650°C, 1 210 MPa (at ambient temperature)/730°C, 1 250 MPa (at ambient temperature)/235°C and 1 550 MPa (at ambient temperature)/600°C. Dimensions