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IEC 62373-1 Ed. 1.0 b:2020

Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
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IEC 62373-1 Ed. 1.0 b:2020

Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

PUBLISH DATE 2020
IEC 62373-1 Ed. 1.0 b:2020

Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

Part 1: Fast BTI test for MOSFET

IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon-based metal-oxide semiconductor field-effect transistors (MOSFETs).

This document also defines the terms pertaining to the conventional BTI test method.

SDO IEC: International Electrotechnical Commission
Document Number IEC 62373
Publication Date July 1, 2020
Language b - English & French
Page Count
Revision Level 1.0
Supercedes
Committee 47
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