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IEC 62417 Ed. 1.0 b:2010

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
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IEC 62417 Ed. 1.0 b:2010

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

PUBLISH DATE 2010
PAGES 20
IEC 62417 Ed. 1.0 b:2010
Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.
SDO IEC: International Electrotechnical Commission
Document Number IEC 62417
Publication Date April 1, 2010
Language b - English & French
Page Count 20
Revision Level 1.0
Supercedes
Committee 47
Publish Date Document Id Type View
April 1, 2010 Revision
April 1, 2010 IEC 62417 Ed. 1.0 b:2010 Revision