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IEC 62880-1 Ed. 1.0 en:2017

Semiconductor devices - Stress migration test standard - Part 1: Copper stress migration test standard
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IEC 62880-1 Ed. 1.0 en:2017

Semiconductor devices - Stress migration test standard - Part 1: Copper stress migration test standard

PUBLISH DATE 2026
PAGES 28
IEC 62880-1 Ed. 1.0 en:2017
Semiconductor devices - Stress migration test standard - Part 1: Copper stress migration test standard
IEC 62880-1:2017(E) describes a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV). This method is to be conducted primarily at the wafer level of production during technology development, and the results are to be used for lifetime prediction and failure analysis. Under some conditions, the method can be applied to package-level testing. This method is not intended to check production lots for shipment, because of the long test time.
SDO IEC: International Electrotechnical Commission
Document Number IEC 62880
Publication Date April 1, 2026
Language en - English
Page Count 28
Revision Level 1.0
Supercedes
Committee 47
Publish Date Document Id Type View
April 1, 2026 IEC 62880-1 Ed. 1.0 en:2017 Revision
Aug. 1, 2017 Revision