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IEC 62951-9 Ed. 1.0 en:2022

Semiconductor devices - Flexible and stretchable semiconductor devices - Part 9: Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells
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IEC 62951-9 Ed. 1.0 en:2022

Semiconductor devices - Flexible and stretchable semiconductor devices - Part 9: Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells

PUBLISH DATE 2022
PAGES 22
IEC 62951-9 Ed. 1.0 en:2022

Semiconductor devices - Flexible and stretchable semiconductor devices - Part 9: Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells

IEC 62951-9:2022(E) specifies the test methods for evaluating the performance of unipolar-type one transistor one resistor (1T1R) resistive memory cells.

The performance test methods in this document include read, forming, SET, RESET, endurance, and retention.

This document is applicable to flexible devices as well as rigid resistive memory devices without any limitations prone to device technology and size.

SDO IEC: International Electrotechnical Commission
Document Number IEC 62951
Publication Date Dec. 1, 2022
Language en - English
Page Count
Revision Level 1.0
Supercedes
Committee 47
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