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Semiconductor devices Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
Semiconductor devices Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection.
IEC 63068-2:2019(E) provides definitions and guidance in the use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers.
Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers.
This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.
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