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IEC 63068-3 Ed. 1.0 b:2020

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
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IEC 63068-3 Ed. 1.0 b:2020

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

PUBLISH DATE 2020
PAGES 56
IEC 63068-3 Ed. 1.0 b:2020

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence.

IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers.

Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.

SDO IEC: International Electrotechnical Commission
Document Number IEC 63068
Publication Date July 1, 2020
Language b - English & French
Page Count
Revision Level 1.0
Supercedes
Committee 47
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