IEC 63068-5 Ed. 1.0 en:2026

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Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 5: Test method for defects using X-ray topography

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IEC 63068-5 Ed. 1.0 en:2026

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 5: Test method for defects using X-ray topography

PUBLISH DATE 2026
IEC 63068-5 Ed. 1.0 en:2026

IEC 63068-5:2026 provides definitions and guidance in the use of the X-ray topography inspection system for detecting defects in silicon carbide (SiC) homoepitaxial wafers.

Additionally, this document exemplifies X-ray topographic images to enable the detection and categorization of defects in SiC homoepitaxial wafers.

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