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IEC 63275-1 Ed. 1.0 b:2022

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
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IEC 63275-1 Ed. 1.0 b:2022

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability

PUBLISH DATE 2022
PAGES 30
IEC 63275-1 Ed. 1.0 b:2022
Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
IEC 63275-1:2022 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).
SDO IEC: International Electrotechnical Commission
Document Number IEC 63275
Publication Date April 1, 2022
Language b - English & French
Page Count
Revision Level 1.0
Supercedes
Committee 47
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