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IEC 63275-2 Ed. 1.0 b:2022

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation
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IEC 63275-2 Ed. 1.0 b:2022

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation

PUBLISH DATE 2022
PAGES 24
IEC 63275-2 Ed. 1.0 b:2022

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation

IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation.

This test is not generally requested for Si power transistors.

SDO IEC: International Electrotechnical Commission
Document Number IEC 63275
Publication Date May 1, 2022
Language b - English & French
Page Count
Revision Level 1.0
Supercedes
Committee 47
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