IEC 63284 Ed. 1.0 b:2022

Current Revision
Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors

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Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors

PUBLISH DATE 2022
PAGES 30

Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors

IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress.

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