IEC/TS 62607-12-3 Ed. 1.0 en:2026

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Nanomanufacturing - Key control characteristics - Part 12-3: 2D material-related products - Schottky barrier heights of 2D material-based field-effect transistors: temperature-dependent current–voltage measurements

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Nanomanufacturing - Key control characteristics - Part 12-3: 2D material-related products - Schottky barrier heights of 2D material-based field-effect transistors: temperature-dependent current–voltage measurements

PUBLISH DATE 2026

IEC TS 62607-12-3:2026, which is a Technical Specification, establishes a standardized method to determine the key control characteristic Schottky barrier height (SBH) from the temperature-dependent current–voltage characterization results obtained from two-dimensional (2D) material-based electronic devices.

This document:

  • defines the Schottky barrier formed from the interface between a 2D material and a metal;
  • specifies a 2D device sample for the measurement of the Schottky barrier;
  • specifies the measurement procedure for the Schottky barrier formed at the interface within 2D devices;
  • provides proper mathematical formulas used to extract the Schottky barrier formed from 2D-materials-based devices;
  • provides relevant case studies; and
  • provides relevant references.
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