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IEEE C62.59-2019

IEEE Standard for Test Methods and Preferred Values for Silicon PN-Junction Clamping Diodes

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IEEE C62.59-2019

IEEE Standard for Test Methods and Preferred Values for Silicon PN-Junction Clamping Diodes

PUBLISH DATE 2019

PAGES 41

IEEE C62.59-2019

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New IEEE Standard - Active. Supersedes IEEE C62.35-2010 and IEEE C62.35-2010/Cor1-2018. The basic electrical parameters to be met by silicon PN junction voltage clamping components used for the protection of telecommunications equipment or lines from surges are defined in this standard. It is intended that this standard be used for the harmonization of existing or future specifications issued by PN diode surge protective component manufacturers, telecommunication equipment manufacturers, administrations, or network operators.

This standard sets terms, test methods, test circuits, measurement procedures and preferred result values for diodes with one or more silicon PN-junctions used for surge voltage clamping in low-voltage systems. The technology types covered are: - Forward biased diodes - Zener breakdown diodes - Avalanche breakdown diodes - Punch-through diodes - Foldback diodes


SDO	IEEE: Institute of Electrical and Electronics Engineers
Document Number	C62.59
Publication Date	Oct. 31, 2019
Language	en - English
Page Count	41
Revision Level
Supercedes
Committee	Surge Protective Devices/Low Voltage

Publish Date	Document Id	Type	View
Oct. 31, 2019	C62.59-2019	Revision

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IEEE C62.59-2019

IEEE Standard for Test Methods and Preferred Values for Silicon PN-Junction Clamping Diodes

IEEE C62.59-2019

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