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BSI BS EN 62417:2010

Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
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BSI BS EN 62417:2010

Semiconductor devices. Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

PUBLISH DATE 2010
PAGES 12
BSI BS EN 62417:2010

This present standard provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. . It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

SDO BSI: British Standards Institution
Document Number EN 62417
Publication Date June 30, 2010
Language en - English
Page Count 12
Revision Level
Supercedes
Committee EPL/47
Publish Date Document Id Type View
June 30, 2010 BS EN 62417:2010 Revision