BSI BS EN IEC 60749-17:2019

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Semiconductor devices. Mechanical and climatic test methods -- Neutron irradiation

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BSI BS EN IEC 60749-17:2019

Semiconductor devices. Mechanical and climatic test methods -- Neutron irradiation

PUBLISH DATE 2019
PAGES 14
BSI BS EN IEC 60749-17:2019

The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test.

The objectives of the test are as follows:

  • to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence, and
  • to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause 6).
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