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BSI BS IEC 63011-3:2018

Integrated circuits. Three dimensional integrated circuits -- Model and measurement conditions of through-silicon via
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BSI BS IEC 63011-3:2018

Integrated circuits. Three dimensional integrated circuits -- Model and measurement conditions of through-silicon via

PUBLISH DATE 2019
PAGES 16
BSI BS IEC 63011-3:2018
IEC 63011-3:2018 specifies a reference model of through-silicon via (TSV) electrical characteristics required for an interface design in three dimensional integrated circuit (3-D IC) to transmit and receive digital data and measurement conditions for resistance and capacitance to specify TSV characteristics in 3-D IC.
Power devices, RF devices and micro-electromechanical systems (MEMS) are not in the scope of this document.  
SDO BSI: British Standards Institution
Document Number IEC 63011-3
Publication Date Jan. 24, 2019
Language en - English
Page Count 16
Revision Level
Supercedes
Committee EPL/47
Publish Date Document Id Type View
Jan. 24, 2019 BS IEC 63011-3:2018 Revision