BSI BS IEC 63011-3:2018

Current Revision
Integrated circuits. Three dimensional integrated circuits -- Model and measurement conditions of through-silicon via

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BSI BS IEC 63011-3:2018

Integrated circuits. Three dimensional integrated circuits -- Model and measurement conditions of through-silicon via

PUBLISH DATE 2019
PAGES 16
BSI BS IEC 63011-3:2018

IEC 63011-3:2018 specifies a reference model of through-silicon via (TSV) electrical characteristics required for an interface design in three dimensional integrated circuit (3-D IC) to transmit and receive digital data.

It also defines measurement conditions for resistance and capacitance to specify TSV characteristics in 3-D IC.

Power devices, RF devices and micro-electromechanical systems (MEMS) are not in the scope of this document.

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