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BSI BS EN 60749-18:2003

Semiconductor devices. Mechanical and climatic test methods -- Ionizing radiation (total dose)
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BSI BS EN 60749-18:2003

Semiconductor devices. Mechanical and climatic test methods -- Ionizing radiation (total dose)

PUBLISH DATE 2004
PAGES 18
BSI BS EN 60749-18:2003
Provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 gamma ray source. Proposes an accelerated annealing test for estimating low dose rate ionizing radiation effects on devices. This annealing test is important for low dose rate or certain other applications in which devices may exhibit significant time-dependent effects. It is intended for military- and space-related applications.
SDO BSI: British Standards Institution
Document Number EN 60749-18
Publication Date July 7, 2004
Language en - English
Page Count 18
Revision Level
Supercedes
Committee EPL/47
Publish Date Document Id Type View
March 13, 2003 BS EN 60749-18:2003 Revision
July 7, 2004 BS EN 60749-18:2003 Consolidated