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BSI BS ISO 12406:2010

Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of arsenic in silicon
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BSI BS ISO 12406:2010

Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of arsenic in silicon

PUBLISH DATE 2010
PAGES 24
BSI BS ISO 12406:2010

This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 × 1016 atoms/cm3 and 2,5 × 1021 atoms/cm3, and to crater depths of 50 nm or deeper.

SDO BSI: British Standards Institution
Document Number ISO 12406
Publication Date Nov. 30, 2010
Language en - English
Page Count 24
Revision Level
Supercedes
Committee CII/60
Publish Date Document Id Type View
Nov. 30, 2010 BS ISO 12406:2010 Revision