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IEC/TS 62607-6-27 Ed. 1.0 en:2025

Nanomanufacturing - Key control characteristics - Part 6-27: Graphene-related products - Field-effect mobility for layers of two-dimensional materials: field-effect transistor method
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IEC/TS 62607-6-27 Ed. 1.0 en:2025

Nanomanufacturing - Key control characteristics - Part 6-27: Graphene-related products - Field-effect mobility for layers of two-dimensional materials: field-effect transistor method

IEC/TS 62607-6-27 Ed. 1.0 en:2025
IEC TS 62607-6-27:2025, which is a Technical Specification, establishes a standardized method to determine the key control characteristic
• field-effect mobility
for semiconducting two-dimensional (2D) materials by the
• field-effect transistor (FET) method.
For two-dimensional semiconducting materials, the field-effect mobility is determined by fabricating a FET test structure and measuring the transconductance in a four-terminal configuration.
- This method can be applied to layers of semiconducting two-dimensional materials, such as graphene, black phosphorus (BP), molybdenum disulfide (MoS ), molybdenum ditelluride (MoTe ), tungsten disulfide (WS ), and tungsten diselenide (WSe ).
- The four-terminal configuration improves accuracy by eliminating parasitic effects from the probe contacts and cables
SDO IEC: International Electrotechnical Commission
Document Number IEC/TS 62607
Publication Date Not Available
Language en - English
Page Count
Revision Level 1.0
Supercedes
Committee 113
Publish Date Document Id Type View
Not Available IEC/TS 62607-6-27 Ed. 1.0 en:2025 Revision