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IEC 62047-25 Ed. 1.0 b:2016

Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area
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IEC 62047-25 Ed. 1.0 b:2016

Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area

PUBLISH DATE 2016
PAGES 50
IEC 62047-25 Ed. 1.0 b:2016

Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area.

IEC 62047-25:2016 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based micro-electromechanical system (MEMS).

This document is applicable to the in-situ pull-press and shearing strength measurement of the micro bonding area fabricated by microelectronic technology process and other micromachining technology.

SDO IEC: International Electrotechnical Commission
Document Number IEC 62047
Publication Date Aug. 1, 2016
Language b - English & French
Page Count
Revision Level 1.0
Supercedes
Committee 47F
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