IEC 62047-26 Ed. 1.0 b:2016

Current Revision

Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures

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IEC 62047-26 Ed. 1.0 b:2016

Name: IEC 62047-26 Ed. 1.0 b:2016 – Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures
Brand: International Electrotechnical Commission
SKU: IEC 62047-26 Ed. 1.0 b:2016
Price: 264.88 USD
Availability: InStock

Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures

PUBLISH DATE 2016

PAGES 62

Semiconductor devices - Micro-electromechanical devices - Part 26: Description and measurement methods for micro trench and needle structures

IEC 62047-26:2016 specifies descriptions of trench structure and needle structure in a micrometer scale. In addition, it provides examples of measurement for the geometry of both structures.

For trench structures, this standard applies to structures with:

a depth of 1 µm to 100 µm;
walls and trenches with respective widths of 5 µm to 150 µm;
an aspect ratio of 0.0067 to 20.

For needle structures, the standard applies to structures with three or four faces with:

a height, horizontal width and vertical width of 2 µm or larger;
dimensions that fit inside a cube with sides of 100 µm.

This standard is applicable to the structural design of MEMS and geometrical evaluation after MEMS processes.