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IEC 60747-9 Ed. 3.0 b:2019

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
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IEC 60747-9 Ed. 3.0 b:2019

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

PUBLISH DATE 2019
PAGES 164
IEC 60747-9 Ed. 3.0 b:2019
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This third edition includes the following significant technical changes with respect to the previous edition:
  1. reverse-blocking IGBT and its related technical contents have been added;
  2. reverse-conducting IGBT and its related technical contents have been added;
  3. some parts of the previous edition have been amended, combined or deleted.
SDO IEC: International Electrotechnical Commission
Document Number IEC 60747
Publication Date Nov. 1, 2019
Language b - English & French
Page Count 164
Revision Level 3.0
Supercedes
Committee 47E
Publish Date Document Id Type View
Nov. 1, 2019 Revision
Nov. 1, 2019 IEC 60747-9 Ed. 3.0 b:2019 Revision