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IEC 62951-3 Ed. 1.0 en:2018

Semiconductor devices - Flexible and stretchable semiconductor devices - Part 3: Evaluation of thin film transistor characteristics on flexible substrates under bulging
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IEC 62951-3 Ed. 1.0 en:2018

Semiconductor devices - Flexible and stretchable semiconductor devices - Part 3: Evaluation of thin film transistor characteristics on flexible substrates under bulging

PUBLISH DATE 2018
PAGES 26
IEC 62951-3 Ed. 1.0 en:2018

Semiconductor devices - Flexible and stretchable semiconductor devices - Part 3: Evaluation of thin film transistor characteristics on flexible substrates under bulging

IEC 62951-3:2018(E) specifies the method for evaluating thin film transistor characteristics on flexible substrates under bulging.

The thin film transistor is fabricated on flexible substrates, including polyethylene terephthalate (PET), polyimide (PI), elastomer, and others.

The stress is applied by applying a uniformly-distributed pressure to the flexible substrate using the equipment.

SDO IEC: International Electrotechnical Commission
Document Number IEC 62951
Publication Date Nov. 1, 2018
Language en - English
Page Count
Revision Level 1.0
Supercedes
Committee 47
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